bzt55-series document number 85637 rev. 1.5, 10-mar-06 vishay semiconductors www.vishay.com 1 9612009 small signal zener diodes features ? very sharp reverse characteristic ? low reverse current level ? available with tighter tolerances ? very high stability ?low noise ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? voltage stabilization mechanical data case: quadromelf glass case sod80 weight: approx. 34 mg packaging codes/options: gs08 / 2.5 k per 7" reel 12.5 k/box gs18 / 10 k per 13" reel 10 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit power dissipation r thja 300 k/w p v 500 mw z-current i z p v /v z ma junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c parameter test condition symbol value unit junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 200 ma v f 1.5 v e2
www.vishay.com 2 document number 85637 rev. 1.5, 10-mar-06 bzt55-series vishay semiconductors electrical characteristics bzt55c.. 1) t p 10 ms, t/t p > 1000 *) additionnal measurement of voltage group 9v1 to 75 at 95 % v zmin 35 na at t j 25 c partnumber zener voltage 1) dynamic resistance te s t current temperature coefficient te s t current reverse leakage current v z at i zt r zj at i zt , f = 1 khz i zt tk vz i zk i r at t amb = 25c i r at t amb = 150 c at v r v ma %/k ma a v min max min max bzt55c2v4 2.28 2.56 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 1 bzt55c2v7 2.5 2.9 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1 bzt55c3v0 2.8 3.2 < 90 < 600 5 - 0.08 - 0.05 1 < 4 < 40 1 bzt55c3v3 3.1 3.5 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzt55c3v6 3.4 3.8 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzt55c3v9 3.7 4.1 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzt55c4v3 4 4.6 < 90 < 600 5 - 0.06 - 0.03 1 < 1 < 20 1 bzt55c4v7 4.4 5 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 bzt55c5v1 4.8 5.4 < 60 < 550 5 - 0.02 0.02 1 < 0.1 < 2 1 bzt55c5v6 5.2 6 < 40 < 450 5 - 0.05 0.05 1 < 0.1 < 2 1 bzt55c6v2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2 bzt55c6v8 6.4 7.2 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3 bzt55c7v5 7 7.9 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5 bzt55c8v2 7.7 8.7 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2 bzt55c9v1 * 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8 bzt55c10 * 9.4 10.6 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5 bzt55c11 * 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2 bzt55c12 * 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1 bzt55c13 * 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10 bzt55c15 * 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11 bzt55c16 * 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12 bzt55c18 * 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13 bzt55c20 * 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15 bzt55c22 * 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16 bzt55c24 * 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18 bzt55c27 * 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20 bzt55c30 * 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22 bzt55c33 * 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24 bzt55c36 * 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27 bzt55c39 * 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 < 5 30 bzt55c43 * 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33 bzt55c47 * 44 50 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36 bzt55c51 * 48 54 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 bzt55c56 * 52 60 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 bzt55c62 * 58 66 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 bzt55c68 * 64 72 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 bzt55c75 * 70 79 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
bzt55-series document number 85637 rev. 1.5, 10-mar-06 vishay semiconductors www.vishay.com 3 electrical characteristics bzt55b.. 1) t p 10 ms, t/t p > 1000 *) additionnal measurement of vo ltage group 9v1 to 75 at 95 % v zmin 35 na at t j 25 c partnumber zener voltage 1) dynamic resistance te s t current temperature coefficient of zener voltage te s t current reverse leakage current v z at i zt r zj at i zt , f = 1 khz i zt tk vz i zk i r at t amb = 25c i r at t amb = 150 c at v r v ma %/k ma a v min max min max bzt55b2v4 2.35 2.45 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 1 bzt55b2v7 2.64 2.76 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1 bzt55b3v0 2.94 3.06 < 90 < 600 5 - 0.08 - 0.05 1 < 4 < 40 1 bzt55b3v3 3.24 3.36 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzt55b3v6 3.52 3.68 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzt55b3v9 3.82 3.98 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzt55b4v3 4.22 4.38 < 90 < 600 5 - 0.06 - 0.03 1 < 1 < 20 1 bzt55b4v7 4.6 4.8 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 bzt55b5v1 5 5.2 < 60 < 550 5 - 0.02 0.02 1 < 0.1 < 2 1 bzt55b5v6 5.48 5.72 < 40 < 450 5 - 0.05 0.05 1 < 0.1 < 2 1 bzt55b6v2 6.08 6.32 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2 bzt55b6v8 6.66 6.94 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3 bzt55b7v5 7.35 7.65 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5 bzt55b8v2 8.04 8.36 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2 bzt55b9v1 * 8.92 9.28 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8 bzt55b10 * 9.8 10.2 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5 bzt55b11 * 10.78 11.22 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2 bzt55b12 * 11.76 12.24 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1 bzt55b13 * 12.74 13.26 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10 bzt55b15 * 14.7 15.3 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11 bzt55b16 * 15.7 16.3 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12 bzt55b18 * 17.64 18.36 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13 bzt55b20 * 19.6 20.4 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15 bzt55b22 * 21.55 22.45 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16 bzt55b24 * 23.5 24.5 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18 bzt55b27 * 26.4 27.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20 bzt55b30 * 29.4 30.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22 bzt55b33 * 32.4 33.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24 bzt55b36 * 35.3 36.7 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27 bzt55b39 * 38.2 39.8 < 90 < 500 2.5 0.04 0.12 1 < 0.1 < 5 30 bzt55b43 * 42.1 43.9 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33 bzt55b47 * 46.1 47.9 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36 bzt55b51 * 50 52 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 bzt55b56 * 54.9 57.1 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 bzt55b62 * 60.8 63.2 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 bzt55b68 * 66.6 69.4 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 bzt55b75 * 73.5 76.5 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
www.vishay.com 4 document number 85637 rev. 1.5, 10-mar-06 bzt55-series vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified figure 1. total power dissipati on vs. ambient temperature figure 2. typical change of work ing voltage under operating conditions at t amb =25c figure 3. typical change of working voltage vs. junction temperature 0 120 160 0 100 300 400 500 600 p tot - total po w er dissipation (m w ) t am b - am b ient temperat u re (c) 200 95 9602 200 8 0 40 10 15 20 1 10 100 1000 v z - v oltage change (m v ) v z - z- v oltage ( v ) 25 95 959 8 t j = 25 c i z = 5 ma 0 5 - 60 60 120 1 8 0 0. 8 0.9 1.0 1.1 1.2 1.3 v ztn - relati v e v oltage change t j - j u nction temperat u re (c) 240 95 9599 0 v ztn = v zt / v z (25 c) 0 tk v z = 10 x 10 -4 /k 8 x 10 -4 /k 2 x 10 -4 /k 6 x 10 -4 /k 4 x 10 -4 /k - 4 x 10 -4 /k - 2 x 10 -4 /k figure 4. temperature coefficient of vz vs. z-voltage figure 5. diode capacitance vs. z-voltage figure 6. forward current vs. forward voltage 30 - 5 0 5 10 15 v z - z- v oltage ( v ) 50 95 9600 40 i z = 5 ma 10 20 0 tk v z - temperat u re coefficient of v z (10 -4 /k) 10 15 0 50 100 150 200 c d - diode capacitance (pf) v z - z- v oltage ( v ) 25 95 9601 20 t j = 25 c v r = 2 v 0 5 0 0.2 0.4 0.6 0. 8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t j = 25 c
bzt55-series document number 85637 rev. 1.5, 10-mar-06 vishay semiconductors www.vishay.com 5 figure 7. z-current vs. z-voltage figure 8. z-current vs. z-voltage 8 20 95 9604 0 20 40 60 8 0 100 i z - z-c u rrent (ma) p tot = 500 m w t am b = 25 c 046 12 v z - z- v oltage ( v ) 15 20 25 30 0 10 20 30 40 50 i z - z-c u rrent (ma) v z - z- v oltage ( v ) 35 95 9607 p tot = 500 m w t am b = 25 c figure 9. differential z-resistance vs. z-voltage 0 5 10 15 20 1 10 100 1000 ( ) 25 95 9606 tj = 25 c i z = 1 ma 5 ma 10 ma v z - z- v oltage ( v ) r z - differential z-resistance figure 10. thermal response 1 10 100 1000 z thp - thermal resistance for p u lse cond. (k w ) t p - p u lse length (ms) 95 9603 10 -1 10 0 10 1 10 2 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 single p u lse r thja = 300 k/ w t = t jmax - t am b i zm = (- v z + (v z 2 + 4r zj x t/z thp ) 1/2 )/(2r zj )
www.vishay.com 6 document number 85637 rev. 1.5, 10-mar-06 bzt55-series vishay semiconductors package dimensions in mm (inches) 12071
bzt55-series document number 85637 rev. 1.5, 10-mar-06 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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